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Preliminary Technical Information
PolarHV TM
Power MOSFET
(Electrically Isolated Tab)
IXTP 10N60PM
V DSS
I D25
R DS(on)
= 600 V
= 5 A
≤ 740 m Ω
N-Channel Enhancement Mode
Avalanche Rated
OVERMOLDED TO-220
Symbol
Test Conditions
Maximum Ratings
(IXTP...M) OUTLINE
V DSS
V DGR
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M Ω
600
600
V
V
V GS
V GSM
I D25
I DM
I AR
E AR
E AS
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
± 30
± 40
5
30
10
20
500
V
V
A
A
A
mJ
mJ
G
DS
G = Gate
S = Source
Isolated Tab
D = Drain
dv/dt
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
10
V/ns
T J ≤ 150 ° C, R G = 10 Ω
P D
T J
T JM
T stg
T L
T SOLD
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
50
-55 ... +150
150
-55 ... +150
300
260
W
° C
° C
° C
° C
° C
Features
Plastic overmolded tab for electrical
isolation
International standard package
Unclamped Inductive Switching (UIS)
rated
M d
Weight
Mounting torque
1.13/10 Nm/lb.in.
4
g
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Space savings
High power density
BV DSS
V GS = 0 V, I D = 250 μ A
600
V
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 100 μ A
V GS = ± 30 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
T J = 125 ° C
3.0
5.0
± 100
5
50
V
nA
μ A
μ A
R DS(on)
V GS = 10 V, I D = 5 A
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
740 m Ω
? 2006 IXYS All rights reserved
DS99450E(04/06)
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